Crystal structure of the growth surface of silicon carbide obtained by sublimation-Reference-Cited by-同舟云学术

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Crystal structure of the growth surface of silicon carbide obtained by sublimation

Published:2007-03 Issue:2 Volume:52 Page:280-283
ISSN:1063-7745
Container-title:Crystallography Reports
language:en
Short-container-title:Crystallogr. Rep.

Author:

Babayants G. I.,Popenko V. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1134/S1063774507020204.pdf

Reference5 articles.

1. M. Mountain, R. Kurz, and J. Oschmann, Proc. SPIE 2199, 41 (1994).

2. N. B. Strokan, A. M. Ivanov, N. S. Savkin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 38(7), 841 (2004) [Semiconductors 38, 807 (2004)].

3. G. I. Babayants, K. G. Babayants, and V. A. Popenko, Zh. Tekh. Fiz. 74(12), 94 (2004) [Tech. Phys. 49, 1631 (2004)].

4. S. A. Dobrolezh, S. M. Zubkova, V. A. Kravets, et al., in Silicon Carbide (GITL, Kiev, 1963) [in Russian].

5. L. N. Danil’chuk, Yu. A. Drozdov, A. O. Okunev, et al., Zavod. Lab. 69(11), 26 (2003).

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