Study of microdefects in GaAs:Si single crystals grown by the vertical gradient freeze method-Reference-Cited by-同舟云学术

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Study of microdefects in GaAs:Si single crystals grown by the vertical gradient freeze method

Published:2007-03 Issue:2 Volume:52 Page:292-296
ISSN:1063-7745
Container-title:Crystallography Reports
language:en
Short-container-title:Crystallogr. Rep.

Author:

Filatov P. A.,Bublik V. T.,Markov A. V.,Shcherbachev K. D.,Voronova M. I.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1134/S1063774507020228.pdf

Reference11 articles.

1. V. T. Bublik, K. D. Shcherbachev, and S. Yu. Matsnev, Izv. Vyssh. Uchebn. Zaved., Mater. Élektron. Tekh., No. 1, 54 (2005).

2. V. T. Bublik, K. D. Shcherbachev, and S. Yu. Matsnev, Izv. Vyssh. Uchebn. Zaved., Mater. Élektron. Tekh., No. 1, 75 (2004).

3. V. T. Bublik, K. D. Shcherbachev, and E. V. Zhevnerov, Izv. Vyssh. Uchebn. Zaved., Mater. Élektron. Tekh., No. 3, 72 (1998).

4. W. L. Bond, Acta Crystallogr. 3, 814 (1960).

5. V. I. Lisoĭvan, Measurement of Unit-Cell Parameters on Single-Crystal Spectrometer (Nauka, Novosibirsk, 1982) [in Russian].

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1. Growth of lead iodide single crystals used for nuclear radiation detection of Gamma-rays;Crystal Research and Technology;2017-03

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