Gallium Nitride–Based Heterostructures on Silicon Substrates for Powerful Microwave Transistors-Reference-Cited by-同舟云学术

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Gallium Nitride–Based Heterostructures on Silicon Substrates for Powerful Microwave Transistors

Published:2019-07 Issue:7-8 Volume:14 Page:385-388
ISSN:1995-0780
Container-title:Nanotechnologies in Russia
language:en
Short-container-title:Nanotechnol Russia

Author:

Ezubchenko I. S.,Chernykh M. Y.,Andreev A. A.,Grishchenko J. V.,Chernykh I. A.,Zanaveskin M. L.

Publisher

Pleiades Publishing Ltd

Subject

General Engineering,Condensed Matter Physics,General Materials Science

Link

https://link.springer.com/content/pdf/10.1134/S1995078019040050.pdf

Reference17 articles.

1. T. Ueda, Jpn. J. Appl. Phys. 58, C0804 (2019).

2. S. L. Selvaraj, T. Suzue, and T. Egawa, IEEE Electron Dev. Lett. 30, 587 (2009).

3. D. Zhu, D. J. Wallis, and C. J. Humphreys, Rep. Prog. Phys. 76, 106501 (2013).

4. B. J. Baliga, Semicond. Sci. Technol. 28, 074011 (2013).

5. K. Wang, Y. Xing, J. Han, et al., J. Alloys Compd. 671, 435 (2016).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN-on-Silicon Growth Features: Controlled Plastic Deformation;Technical Physics Letters;2021-12-20

2. Powerful Gallium Nitride Microwave Transistors on Silicon Substrates;Nanotechnologies in Russia;2020-03

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