Impact-ionization autosolitons in silicon with deep impurity levels-Reference-Cited by-同舟云学术

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Impact-ionization autosolitons in silicon with deep impurity levels

Published:2003-12 Issue:12 Volume:29 Page:993-995
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Musaev A. M.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1639453.pdf

Reference6 articles.

1. B. S. Kerner and V. V. Osipov, Autosolitons (Nauka, Moscow, 1991).

2. B. S. Kerner and V. F. Sinkevich, Pis’ma Zh. Éksp. Teor. Fiz. 36, 359 (1982) [JETP Lett. 36, 436 (1982)].

3. V. N. Vashchenko, B. S. Kerner, V. V. Osipov, and V. F. Sinkevich, Fiz. Tekh. Poluprovodn. (Leningrad) 24, 1705 (1990) [Sov. Phys. Semicond. 24, 1065 (1990)].

4. A. M. Musaev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 1183 (1999) [Semiconductors 33, 1076 (1999)].

5. A. G. Milnes, Deep Impurities in Semiconductors (Wiley, New York, 1973; Mir, Moscow, 1977).

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