Current transport in porous p-Si and Pd-porous Si structures-Reference-Cited by-同舟云学术

Current transport in porous p-Si and Pd-porous Si structures

Published:1998-09 Issue:9 Volume:32 Page:960-962
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Slobodchikov S. V.,Salikhov Kh. M.,Russu E. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187524.pdf

Reference7 articles.

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3. S. V. Slobodchikov, Kh. M. Salikhov, E. V. Russu, M. M. Meredov, and A. I. Yazlyeva, Fiz. Tekh. Poluprovodn. 31, 15 (1997) [Semiconductors 31, 111 (1997)].

4. A. Rose, Phys. Rev. 97, 1538 (1955).

5. É. I. Adirovich, P. M. Karageorgii-Alkalaev, and A. Yu. Leiderman, in Double-Injection Currents in Semiconductors (Nauka, Moscow, 1978), p. 73, 118–122.

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