Electrical characteristics of (p)3C-SiC-(n)6H-SiC heterojunctions-Reference-Cited by-同舟云学术

Electrical characteristics of (p)3C-SiC-(n)6H-SiC heterojunctions

Published:2002-09 Issue:9 Volume:28 Page:792-794
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Lebedev A. A.,Strel’chuk A. M.,Davydov D. V.,Savkina N. S.,Kuznetsov A. N.,Sorokin L. M.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1511788.pdf

Reference8 articles.

1. A. A. Lebedev, A. M. Strel’chuk, D. V. Davydov, et al., Appl. Surf. Sci. 183, 421 (2001).

2. A. A. Lebedev, G. N. Mosina, I. P. Nikitina, et al., Pis’ma Zh. Tekh. Fiz. 27(24), 57 (2001) [Tech. Phys. Lett. 27, 1052 (2001)].

3. Yu. M. Altaiskii, S. F. Avramenko, O. A. Guseva, and V. S. Kiselev, Fiz. Tekh. Poluprovodn. (Leningrad) 21, 2072 (1987) [Sov. Phys. Semicond. 21, 1256 (1987)].

4. A. A. Lebedev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 129 (1999) [Semiconductors 33, 107 (1999)].

5. C. G. B. Garret and W. H. Brattain, Phys. Rev. B 19(2), 376 (1970).

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical study of the thermodynamic stability and electronic structure of thin films of 3C, 2H, and 2D silicon carbides;Physics of the Solid State;2014-08

2. Comparative study of 3C-SiC layers sublimation-grown on a 6H-SiC substrate;Semiconductors;2013-09

3. Low-temperature production of silicon carbide films of different polytypes;Semiconductors;2009-05

4. Low temperature crystallization of amorphous silicon carbide thin films for p–n junction devices fabrication;Journal of Materials Science: Materials in Electronics;2007-11-08

5. Estimates of the exciton transition energy in NH/3C/NH (N = 2, 4, 6, 8) heterostructures based on silicon carbide polytypes;Semiconductors;2006-05