A Complex for Diagnostics of Laser Radiation of Semiconductor Targets Excited by a High-Frequency-Modulated Electron Beam

Author:

Nasibov A. S.,Berezhnoi K. V.,Tasmagulov I. D.,Yalandin M. I.,Sadykova A. G.,Ul’maskulov M. R.,Shunailov S. A.

Abstract

Abstract—A complex of equipment for diagnosing the parameters of laser radiation of semiconductor targets, which are excited by high-frequency-modulated electron-beam pulses, is described. The ability to control the shape and duration of laser radiation in the picosecond range via high-frequency modulation of an accelerating-voltage pulse was demonstrated experimentally. A train of laser-radiation pulses with a maximum intensity of up to 2 × 107 W/cm2 was obtained on a cadmium sulfide target (λ = 525 nm).

Publisher

Pleiades Publishing Ltd

Subject

Instrumentation

Reference17 articles.

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5. Nasibov, A.S., Berezhnoi, K.V., Shapkin, P.V., Reutova, A.G., Shunailov, S.A., and Yalandin, M.I., Instrum. Exp. Tech., 2009, no. 1, p. 65. https://doi.org/10.1134/S0020441209010102

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