Use of contact illumination for high-resistance semiconductor conductivity measurements-Reference-Cited by-同舟云学术

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Use of contact illumination for high-resistance semiconductor conductivity measurements

Published:2014-05 Issue:3 Volume:57 Page:326-329
ISSN:0020-4412
Container-title:Instruments and Experimental Techniques
language:en
Short-container-title:Instrum Exp Tech

Author:

Golubyatnikov V. A.,Grigor’ev F. I.,Lysenko A. P.,Strogankova N. I.,Shadov M. B.,Belov A. G.

Publisher

Pleiades Publishing Ltd

Subject

Instrumentation

Link

http://link.springer.com/content/pdf/10.1134/S0020441214020079.pdf

Reference4 articles.

1. Blank, T.V. and Gol’dberg, Yu.A., Semiconductors, 2007, vol. 41, no. 1, p. 1263.

2. Kovalev, A.N., Izvestiya Vyssh. Uchebn. Zaved. Mater. Elektron. Tekhn., 2007, no. 2, p. 4.

3. Makhnii, V.P., Tech. Phys., 2005, vol. 50, p. 1513.

4. Vikulin, I.M. and Stafeev, V.I., Fizika poluprovodnikovykh priborov (Physics of Semiconductor Devices), Moscow: Sovetskoe Radio, 1980.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of low-electronegativity doping on the temperature rise of Ag/ZnO electrical contact materials;Journal of Alloys and Compounds;2024-10

2. Features of Stationary Photoconductivity of High-Ohmic Semiconductors Under Local Illumination;Russian Physics Journal;2018-04

3. Modification of the Van der Pau method for measuring electrophysical parameters of high-resistance semiconductors;Instruments and Experimental Techniques;2014-09

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