Subthreshold characteristics of electrostatically switched transistors and thyristors. II. Deep in-plane gate-Reference-Cited by-同舟云学术

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Subthreshold characteristics of electrostatically switched transistors and thyristors. II. Deep in-plane gate

Published:1998-04 Issue:4 Volume:32 Page:446-451
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Kyuregyan A. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187413.pdf

Reference5 articles.

1. A. S. Kyuregyan and S. N. Yurkov, Fiz. Tekh. Poluprovodn. 32, 249 (1998) [Semiconductors 32, 225 (1998)].

2. B. J. Baliga, Modern Power Devices, Singapore (1987), p. 132.

3. A. V. Gorbatyuk and I. V. Grekhov, Fiz. Tekh. Poluprovodn. 15, 1353 (1981) [Sov. Phys. Semicond. 15, 781 (1981)].

4. M. A. Lavrent’ev and B. V. Shabat, Methods in the Theory of Functions of a Complex Variable [in Russian], Nauka, Moscow (1987).

5. A. V. Gorbatyuk and A. S. Kyuregyan, Mikroélektronika 20, 254 (1991).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Topology of a High-Power Compound Transistor and Its Blocking Ability during Commutation;Russian Electrical Engineering;2019-02

2. Subthreshold characteristics of electrostatically controlled transistors and thyristors III. Buried gate;Semiconductors;1998-06

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