Photoluminescence and the Raman Scattering in Porous GaSb Produced by Ion Implantation-Reference-Cited by-同舟云学术

Photoluminescence and the Raman Scattering in Porous GaSb Produced by Ion Implantation

Published:2005 Issue:1 Volume:39 Page:132
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Danilov Yu. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1852662.pdf

Reference18 articles.

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4. T. L. Rutenhouse, P. W. Bohn, T. K. Hossain, et al., J. Appl. Phys. 95, 490 (2004).

5. D. N. Goryachev and O. M. Sreseli, Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 1383 (1997) [Semiconductors 31, 1192 (1997)].

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