Possibilities for achieving steady-state growth conditions during oriented crystallization of gallium antimonide by the vertical Bridgman method using the “Polizon” setup-Reference-Cited by-同舟云学术

Possibilities for achieving steady-state growth conditions during oriented crystallization of gallium antimonide by the vertical Bridgman method using the “Polizon” setup

Published:2009-02 Issue:1 Volume:3 Page:129-136
ISSN:1027-4510
Container-title:Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
language:en
Short-container-title:J. Synch. Investig.

Author:

Serebryakov Yu. A.,Marchenko M. P.,Prokhorov I. A.,Korobeinikova E. N.,Shulpina I. L.

Publisher

Pleiades Publishing Ltd

Subject

Surfaces, Coatings and Films

Link

http://link.springer.com/content/pdf/10.1134/S1027451009010212.pdf

Reference34 articles.

1. G. Palfinger, B. Bitnar, W. Durisch, et al., Semicond. Sci. Technol. 18, 254 (2003).

2. G. Muller, Crystal Growth from the Melt (Springer, Berlin, 1988; Mir, Moscow, 1991).

3. A. G. Ostrogorsky and G. Müller, J. Cryst. Growth 121, 587 (1992).

4. V. D. Golyshev and M. A. Gonik, “The Device for Crystals Growth,” RF Patent No. 1800854 ot 15.02.1990, Byull. Izobret. (1990).

5. A. V. Kartavykh and V. V. Rakov, Pis’ma Zh. Tekh. Fiz. 32(22), 70 (2006) [Tech. Phys. Lett. 32, 990 (2006)].

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