The Effects of Temperature and Electric Field on the Electronic and Optical Properties of an InAs Quantum Dot Placed at the Center of a GaAs Nanowire-Reference-Cited by-同舟云学术

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The Effects of Temperature and Electric Field on the Electronic and Optical Properties of an InAs Quantum Dot Placed at the Center of a GaAs Nanowire

Published:2022-12 Issue:6 Volume:16 Page:1237-1247
ISSN:1027-4510
Container-title:Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
language:en
Short-container-title:J. Surf. Investig.

Author:

Moradi Maryam,Moradi Mahmood

Publisher

Pleiades Publishing Ltd

Subject

Surfaces, Coatings and Films

Link

https://link.springer.com/content/pdf/10.1134/S1027451022060428.pdf

Reference51 articles.

1. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001). https://doi.org/10.1063/1.1368156

2. K. Iga and S. Kinoshita, Process Technology for Semiconductor Lasers (Springer, Berlin, 1996).

3. S. Adachi, Physical Properties of III–V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP (Wiley, New York, 1992).

4. D. Bimberg and N. Ledentsov, J. Phys.: Condens. Matter 15, R1063 (2003). https://doi.org/10.1088/0953-8984/15/24/201

5. A. D. Stiff, S. Krishna, P. Bhattacharya, and S. W. Kennerly, IEEE J. Quantum Electron. 37, 1412 (2001). https://doi.org/10.1109/3.958360

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