Effect of surface defects on radiative interband recombination in silicon nanocrystals highly doped with hydrogen-like impurities-Reference-Cited by-同舟云学术

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Effect of surface defects on radiative interband recombination in silicon nanocrystals highly doped with hydrogen-like impurities

Published:2010-11 Issue:6 Volume:4 Page:987-993
ISSN:1027-4510
Container-title:Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
language:en
Short-container-title:J. Synch. Investig.

Author:

Belyakov V. A.,Burdov V. A.,Sidorenko K. V.

Publisher

Pleiades Publishing Ltd

Subject

Surfaces, Coatings and Films

Link

http://link.springer.com/content/pdf/10.1134/S1027451010060182.pdf

Reference30 articles.

1. M. S. Hybertsen, Phys. Rev. Lett. 72, 1514 (1994).

2. C. Delerue, G. Allan, and M. Lannoo, Phys. Rev. B 64, 193402(2001).

3. A. S. Moskalenko, J. Berakdar, A. A. Prokofiev, and I. N. Yassievich, Phys. Rev. B 76, 085427 (2007).

4. V. A. Belyakov, V. A. Burdov, R. Lockwood, and A. Meldrum, Adv. Opt. Tech. 2008, 279502 (2008).

5. Y. Kanemitsu, Phys. Rev. B 53, 13515 (1996).

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