Analysis of the Results of Silicon Sputtering Simulation as Functions of Different Ar

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Analysis of the Results of Silicon Sputtering Simulation as Functions of Different Ar–Si Potentials

Published:2019-11 Issue:6 Volume:13 Page:1272-1279
ISSN:1027-4510
Container-title:Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
language:en
Short-container-title:J. Synch. Investig.

Author:

Sycheva A. A.,Voronina E. N.,Palov A. P.

Publisher

Pleiades Publishing Ltd

Subject

Surfaces, Coatings and Films

Link

http://link.springer.com/content/pdf/10.1134/S1027451019060521.pdf

Reference27 articles.

1. P. Sigmund, Phys. Rev. 184 (2), 383 (1969). https://doi.org/10.1103/PhysRev.184.383

2. K. Wittmaack, Phys. Rev. 68 (23), 235211 (2003). https://doi.org/10.1103/PhysRevB.68.235211

3. P. C. Zalm, J. Appl. Phys. 54 (5), 2660 (1983). https://doi.org/10.1063/1.332340

4. D. V. Lopaev, T. V. Rakhimova, A. T. Rakhimov, A. I. Zotovich, et al., J. Phys. D: Appl. Phys. 51 (2), 02LT02 (2017). https://doi.org/10.1088/1361-6463/aa9c18

5. Sputtering by ion bombardment: Theoretical concepts;P. Sigmund,1981

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