Ion-Track Modification of a Silicon-Dioxide Film Implanted with Zinc Ions and Annealed in Oxygen-Reference-Cited by-同舟云学术

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Ion-Track Modification of a Silicon-Dioxide Film Implanted with Zinc Ions and Annealed in Oxygen

Published:2019-03 Issue:2 Volume:13 Page:326-334
ISSN:1027-4510
Container-title:Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
language:en
Short-container-title:J. Synch. Investig.

Author:

Privezentsev V. V.,Palagushkin A. N.,Skuratov V. A.,Kulikauskas V. S.,Zatekin V. V.,Makunin A. V.,Kiselev D. A.,Steinman E. A.,Tereshchenko A. N.

Publisher

Pleiades Publishing Ltd

Subject

Surfaces, Coatings and Films

Link

http://link.springer.com/content/pdf/10.1134/S102745101902037X.pdf

Reference22 articles.

1. C. W. Litton, T. C. Collins, and D. S. Reynolds, Zinc Oxide Material for Electronic and Optoelectronic Device Application (Wiley, Chichester, 2011).

2. H. Amekura, Y. Sakuma, K. Kono, et al., Phys. B (Amsterdam, Neth.) 376–377, 760 (2006).

3. C. Y. Jiang, X. W. Sun, G. Q. Lo, et al., Appl. Phys. Lett. 90, 263501 (2007).

4. C. Li, Y. Yang, X. W. Sun, et al., Nanotechnology 18, 135604 (2007).

5. S. Chu, M. Olmedo, Zh. Yang, et al., Appl. Phys. Lett. 93, 181106 (2008).

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of Memristors Based on Silicon-Oxide Films Implanted with Zinc;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2022-06

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