Electron microscopy investigation of GaAs(100)-(Ga2Se3)-GaAs nanostructures-Reference-Cited by-同舟云学术

Electron microscopy investigation of GaAs(100)-(Ga2Se3)-GaAs nanostructures

Published:2007-12 Issue:6 Volume:1 Page:750-753
ISSN:1027-4510
Container-title:Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
language:en
Short-container-title:J. Synch. Investig.

Author:

Agapov B. L.,Bezryadin N. N.,Synorov Yu. V.,Kotov G. I.,Tatokhin E. A.,Starodubtsev A. A.,Kuzubov S. V.

Publisher

Pleiades Publishing Ltd

Subject

Surfaces, Coatings and Films

Link

Reference8 articles.

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2. N. N. Bezryadin, G. I. Kotov, I. N. Arsentjev, and A. A. Starodubtsev, Fiz. Tekh. Poluprovodn. 39(9), 1025 (2005) [Semiconductors 39, 989 (2005)].

3. B. I. Sysoev, N. N. Bezryadin, G. I. Kotov, and V. D. Strygin, Fiz. Tekh. Poluprovodn. 27(1), 131 (1993) [Semiconductors 27, 69 (1993)].

4. B. I. Sysoev, N. N. Bezryadin, G. I. Kotov, et al., Fiz. Tekh. Poluprovodn. 29(1), 24 (1995) [Semiconductors 29, 12 (1995)].

5. B. I. Sysoev, V. D. Strygin, and G. I. Kotov, Pis’ma Zh. Tekh. Fiz. 16(9), 22 (1990) [Sov. Tech. Phys. Lett. 16, 650 (1990)].

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