Comparison of autoemission properties of tungsten/n-and p-type semiconductor systems-Reference-Cited by-同舟云学术

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Comparison of autoemission properties of tungsten/n-and p-type semiconductor systems

Published:2008-10 Issue:5 Volume:2 Page:748-750
ISSN:1027-4510
Container-title:Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
language:en
Short-container-title:J. Synch. Investig.

Author:

Egorov N. V.,Antonova L. I.,Antonov S. P.

Publisher

Pleiades Publishing Ltd

Subject

Surfaces, Coatings and Films

Link

http://link.springer.com/content/pdf/10.1134/S1027451008050145.pdf

Reference5 articles.

1. Thien Bihn Yu and Ch. Adessi, Phys. Rev. Lett. 85(4), 864 (2000).

2. V. Semet and Thien Binh, J. Vac. Technol. B 23(2), 824 (2005).

3. N. V. Egorov, L. I. Antonova, and S. R. Antonov, Poverkhnost, No. 8, 59 (2007).

4. L. N. Dobretsov and M. V. Gomoyunova, in Emission Electronics (Nauka, Moscow, 1966), p. 197 [in Russian].

5. M. I. Elinson and G. F. Vasiliev, Autoelectronic Emission (Fizmatlit, Moscow, 1958) [in Russian].

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental and numerical investigation of the emission properties of a cathode with a W-Cs3Sb coating;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2012-11

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