Nonequilibrium processes in Hg1−x CdxTe n +−p junctions in a magnetic field-Reference-Cited by-同舟云学术

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Nonequilibrium processes in Hg1−x CdxTe n +−p junctions in a magnetic field

Published:1997-10 Issue:10 Volume:23 Page:813-815
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Virt I. S.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1261811.pdf

Reference8 articles.

1. S. C. Shen, Semicond. Sci. Technol. 8, 443 (1993).

2. S. V. Belotelov, V. I. Ivanov-Omskii, A. I. Izhnin, and V. A. Smirnov, Fiz. Tekh. Poluprovodn. 25, 1058 (1991) [Sov. Phys. Semicond. 25, 637 (1991)].

3. H. F. Shaake, J. Vac. Sci. Technol. A 4, 2174 (1984).

4. M. G. Andrukhiv, S. V. Belotelov, and I. S. Virt, Fiz. Tekh. Poluprovodn. 27, 1863 (1993) [Semiconductors 27, 1026 (1993)].

5. Yu. R. Nosov, Switching in Semiconductor Diodes, Plenum Press, New York (1969).

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