1. Novotortsev, V.M., Kalinnikov, V.T., Koroleva, L.I., et al., CdGeAs2: A High-Temperature Ferromagnetic Semiconductor, Zh. Neorg. Khim., 2005, vol. 50, no. 4, p. 552.
2. Mollaev, A.Yu., Arslanov, R.K., Zalibekov, U.Z., and Marenkin, S.F., Structural Phase Transformations of the New Ferromagnetic Semiconductor CdGeAs2〈Mn〉, Fizika (Baku), 2007, vol. 13, nos. 1–2, p. 320.
3. Mollaev, A.Yu., Saipulaeva, L.A., Arslanov, R.K., and Marenkin, S.F., Effect of Hydrostatic Pressure on the Transport Properties of Cadmium Diarsenide Crystals, Neorg. Mater., 2001, vol. 37, no. 4, pp. 405–408 [Inorg. Mater. (Engl. Transl.), vol. 37, no. 4, pp. 327–330].
4. Mollaev, A.Yu., Arslanov, R.K., Dzhamamedov, R.G., and Marenkin, S.F., High-Pressure Phase Transformation of Oriented CdSb Single Crystals, Neorg. Mater., 2005, vol. 41, no. 3, pp. 273–275 [Inorg. Mater. (Engl. Transl.), vol. 41, no. 3, pp. 217–219].
5. Shklovskii, B.N. and Efros, A.L., Elektricheskie svoistva legirovannykh poluprovodnikov (Electrical Properties of Doped Semiconductors), Moscow: Nauka, 1979.