A Model for Crystal Growth of Solid Solutions in the InAs–GaAs System by a Modified Floating-Zone Technique
Author:
Publisher
Pleiades Publishing Ltd
Subject
Materials Chemistry,Metals and Alloys,Inorganic Chemistry,General Chemical Engineering
Link
http://link.springer.com/content/pdf/10.1134/S0020168519030014.pdf
Reference12 articles.
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2. Adachi, S., Ogata, Y., Koshikava, N., et al., Homogeneous SiGe crystals grown by using the traveling liquidus-zone method, J. Cryst. Growth, 2005, vol. 280, nos. 3–4, pp. 372–377. https://doi.org/10.1016/j.jcrysgro.2005.04.007
3. Azhdarov, G.Kh., Zeynalov, Z.M., Agamaliyev, Z.A., and Kyazimova, A.I., Growth of single crystals solid solutions by double feeding of the melt method, Crystallogr. Rep., 2010, vol. 55, no. 4, pp. 716–719. https://doi.org/10.1134/s1063774510040309
4. Azhdarov, G.Kh., Kucukomeroglu, T., Varilci, A., et al., Distribution of components in Ge–Si bulk singlecrystals grown under the continuous feeding of the melt with the second component (Si), J. Cryst. Growth, 2001, vol. 226, pp. 437–442. https://doi.org/10.1016/S0022-0248(01)01270-2
5. Yonenaga, I., Growth and fundamental properties of SiGe bulk crystals, J. Cryst. Growth, 2005, vol. 275, pp. 91–98. https://doi.org/10.1016/j.jcrysgro.2004.10.071
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Perspectives of Double Feeding of the Melt Method on the Example of the Analysis of the InAs(1-x)–GaAs(x) Solid Solution Crystals Growth;International Journal of Scientific Research and Management;2022-08-02
2. Effect of aspect ratio on coupled solute-thermocapillary convection instability in half-zone liquid bridge;Thermal Science;2022
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