Effect of the geometric factor on the growth of silicon micro- and nanowhiskers
Author:
Publisher
Pleiades Publishing Ltd
Subject
Materials Chemistry,Metals and Alloys,Inorganic Chemistry,General Chemical Engineering
Link
http://link.springer.com/content/pdf/10.1134/S0020168514010130.pdf
Reference7 articles.
1. Nebol’sin, V.A. and Shchetinin, A.A., Role of surface energy in the vapor-liquid-solid growth of silicon, Inorg. Mater., 2003, vol. 39, no. 9, p. 899.
2. Nebol’sin, V.A., Dunaev, A.I., and Zavalishin, M.A., Effect of the line tension at the vapor-liquid-solid boundary on the growth of silicon nanocrystals, Inorg. Mater., 2008, vol. 44, no. 6, p. 559.
3. Nebol’sin, V.A., Suyatin, D.B., Zotova, E.V., et al., Metal solvent droplet stability in silicon whisker growth, Inorg. Mater., 2012, vol. 48, no. 9, p. 861.
4. Dubrovskii, V.G., Physical consequences of the equivalence of conditions for steady-state growth of nanowires and the nucleation on triple phase line, Tech. Phys. Lett., 2011, vol. 37, no. 1, p. 53.
5. Glas, F., Harmand, J.C., and Patriarche, G., Why does wurtzite form in nanowires of zinc blende semiconductors, Phys. Rev. Lett., 2007, vol. 99, paper 146 101.
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