1. Lunin, L.S., Blagin, A.V., and Alfimova, D.L., Fizika gradientnoi epitaksii mnogokomponentnykh poluprovodnikovykh geterostruktur (The Physics of the Gradient Epitaxy of Multicomponent Semiconductor Heterostructures), Rostov-on-Don: SKNTs VSh, 2008, p. 212.
2. Lunin, L.S. and Sysoev, I.A., Tekhnika gradientnoi epitaksii poluprovodnikovykh geterostruktur elektronnoi tekhniki (Gradient Epitaxy of Semiconductor Heterostructures for Electronic Applications), Rostov-on-Don: SKNTs VSh, 2008, p. 160.
3. Kuznetsov, V.V., Lunin, L.S., and Ratushnyi, V.I., Geterostruktury na osnove chetvernykh i pyaternykh tverdykh rastvorov soedinenii AIIIBV (Heterostructures Based on Quaternary and Quinary Solid Solutions of III-V Compounds), Rostov-on-Don: SKNTs VSh, 2003, p. 376.
4. Ma, C.L.F., Deen, M.J., Tarof, L.E., and Yu, J.C.H., Temperature dependence of breakdown voltages in separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes, IEEE Trans. Electron Devices, 1995, vol. 42, no. 5, p. 810.
5. Dolginov, L.L., Eliseev, P.G., and Ismailov, I., Light-emitting injection devices based on multicomponent semiconductor solid solutions, Itogi Nauki Tekh., Ser.: Radiotekh., 1980, vol. 21, p. 3.