Frequency effect on the electrical and dielectric properties of (TlGaS2) 1 − x (TlInSe2) x (x = 0.005, 0.02) single crystals

Author:

Mustafaeva S. N.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Metals and Alloys,Inorganic Chemistry,General Chemical Engineering

Reference8 articles.

1. Mustafaeva, S.N. and Kerimova, E.M., Optical and X-Ray Dosimetric Properties of (TlGaS2)1 − x (TlInSe2)x Solid Solutions, Materialy IX nauchnotekhnicheskoi konferentsii “Khimiya, fizika i tekhnologiya khal’kogenidov i khal’kogalogenidov” (Proc. IX Science and Technology Conf. Chemistry, Physics, and Technology of Chalcogenides and Chalcohalides), Uzhgorod, 1998, p. 16.

2. Kerimova, E.M., Mustafaeva, S.N., Kerimov, R.N., and Gadzhieva, G.A., Photo- and Roentgenoconductivity of (TlGaS2)1 − x (TlInSe2)x Crystals, Neorg. Mater., 1999, vol. 35, no. 11, pp. 1313–1314 [Inorg. Mater. (Engl. Transl.), vol. 35, no. 11, pp. 1123–1124].

3. Mustafaeva, S.N., Dielectric Dispersion in TlGaS2 Layered Crystals, Fiz. Tverd. Tela (S.-Peterburg), 2004, vol. 46, no. 6, pp. 979–981.

4. Pasynkov, V.V. and Sorokin, V.S., Materialy elektronnoi tekhniki (Electronic Materials), Moscow: Vysshaya Shkola, 1986.

5. Mott, N.F. and Davis, E.A., Electronic Processes in Non-Crystalline Materials, Oxford: Clarendon, 1971.

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