X-ray dosimetric properties of vapor-grown CdGa2S4 single crystals-Reference-Cited by-同舟云学术

X-ray dosimetric properties of vapor-grown CdGa2S4 single crystals

Published:2010-06 Issue:6 Volume:46 Page:587-589
ISSN:0020-1685
Container-title:Inorganic Materials
language:en
Short-container-title:Inorg Mater

Author:

Mustafaeva S. N.,Asadov M. M.,Guseinov D. T.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Metals and Alloys,Inorganic Chemistry,General Chemical Engineering

Link

http://link.springer.com/content/pdf/10.1134/S002016851006004X.pdf

Reference3 articles.

1. Georgobiani, A.N., Radautsan, S.I., and Tiginyanu, I.M., Wide-Gap Semiconductors: Optical and Photoelectric Properties and Potential Applications, Fiz. Tekh. Poluprovodn. (Leningrad), 1985, vol. 19, no. 2, pp. 193–212.

2. Rud’, V.Yu., Rud’, Yu.V., Vaipolin, A.A., et al., Photosensitive Structures Based on CdGa2S4 Single Crystals, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 2003, vol. 37, no. 11, pp. 1321–1328.

3. Bodnar’, I.V., Rud’, V.Yu., and Rud’, Yu.V., Growth and Properties of CdGa2S4 Single Crystals, Neorg. Mater., 2004, vol. 40, no. 2, pp. 144–148 [Inorg. Mater. (Engl. Transl.), vol. 40, no. 2, pp. 102–106].

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