Radiation Resistance of SiC Detectors after Neutron Irradiation-Reference-Cited by-同舟云学术

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Radiation Resistance of SiC Detectors after Neutron Irradiation

Published:2022-12 Issue:6 Volume:19 Page:740-743
ISSN:1547-4771
Container-title:Physics of Particles and Nuclei Letters
language:en
Short-container-title:Phys. Part. Nuclei Lett.

Author:

Gurov Yu. B.,Evseev S. A.,Zamyatin N. I.,Kopylov Yu. A.,Rozov S. V.,Sandukovsky V. G.,Streletskaia E. A.,Hrubcin L.,Zat’ko B.,Boháček P.

Publisher

Pleiades Publishing Ltd

Subject

Radiology, Nuclear Medicine and imaging,Nuclear and High Energy Physics,Atomic and Molecular Physics, and Optics,Radiation

Link

https://link.springer.com/content/pdf/10.1134/S1547477122060115.pdf

Reference9 articles.

1. S. E. Saddow and A. Agarwal, Advances in Silicon Carbide Processing and Applications (Artech House, Boston, 2004).

2. E. V. Kalinina, “The effect of irradiation on the properties of SiC and devices based on this compound,” Semiconductors 41, 745 (2007).

3. L. Hrubčín, Yu. B. Gurov, B. Zatko, S. V. Mitrofanov, S. V. Rozov, K. Sedlačková, V. G. Sandukovsky, V. A. Semin, V. Nečasd, and V. A. Skuratov, “Characteristics of Si and SiC detectors at registration of Xe ions,” J. Instrum. 13, P11005 (2018).

4. Yu. B. Gurov, S. V. Rozov, V. G. Sandukovsky, E. A. Yakushev, L. Hrubcin, and B. Zat’ko, “Characteristics of silicon carbide detectors,” Instrum. Exp. Tech. 58, 22 (2015).

5. M. V. Bulavin, A. E. Verkhoglyadov, S. A. Kulikov, E. N. Kulagin, V. V. Kukhtin, A. P. Cheplakov, and E. P. Shabalin, “Irradiation facility at the IBR-2 reactor for investigating material radiation hardness,” Phys. Part. Nucl. Lett. 12, 344–348 (2015).

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