Radiation Defect Formation in a Silicon Carbide Betaconverter
Author:
Publisher
Pleiades Publishing Ltd
Subject
Radiology, Nuclear Medicine and imaging,Nuclear and High Energy Physics,Atomic and Molecular Physics, and Optics,Radiation
Link
https://link.springer.com/content/pdf/10.1134/S1547477123050345.pdf
Reference16 articles.
1. R. O. Jones, “Density functional theory: Its origins, rise to prominence, and future,” Rev. Mod. Phys. 87, 897–923 (2015).
2. G. Cicero, “Towards SiC surface functionalization: an ab initio study,” J. Chem. Phys. 122, 214716 (2005).
3. M. Jiang et al., “Ab initio molecular dynamics simulation of the effects of stacking faults on the radiation response of 3C-SiC,” Sci. Rep. 6, 20669 (2005).
4. Y. S. Ardakani and M. Moradi, “Electronic and optical properties of Te-doped GaN monolayer before and after adsorption of dimethylmercury, DFT+U/TDDFT and DFT-D2 methods,” J. Mol. Graphics Model. 104, 107837 (2021).
5. N. Liu, et al., “Superconductivity in nitrogen-doped 3C-SiC from first-principles calculations,” Mod. Phys. Lett. B 31, 1750116 (2017).
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