Special features of structural defects in undoped CdTe textured ingots produced by free growth from a gasdynamic vapor flow-Reference-Cited by-同舟云学术

Special features of structural defects in undoped CdTe textured ingots produced by free growth from a gasdynamic vapor flow

Published:2003-02 Issue:2 Volume:37 Page:119-123
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Klevkov Yu. V.,Martovitskii V. P.,Medvedev S. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1548649.pdf

Reference15 articles.

1. K. Durose, G. J. Russel, and J. Woods, J. Cryst. Growth 72, 85 (1985).

2. K. Durose and G. J. Russel, J. Cryst. Growth 86, 471 (1988).

3. V. S. Bagaev, V. V. Zaitsev, Yu. V. Klevkov, et al., Fiz. Tverd. Tela (St. Petersburg) 43, 1779 (2001) [Phys. Solid State 43, 1853 (2001)].

4. Yu. V. Klevkov, S. A. Kolosov, S. A. Medvedev, and A. F. Plotnikov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 35, 1192 (2001) [Semiconductors 35, 1139 (2001)].

5. S. S. Gorelik, L. N. Rastorguev, and Yu. A. Skakov, X-Ray and Electron-Optical Analyses (Metallurgiya, Moscow, 1970).

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