Resonant radiationless excitation transfer to I2 molecules sorbed in pores of porous silicon-Reference-Cited by-同舟云学术

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Resonant radiationless excitation transfer to I2 molecules sorbed in pores of porous silicon

Published:2001-05 Issue:10 Volume:73 Page:510-513
ISSN:0021-3640
Container-title:Journal of Experimental and Theoretical Physics Letters
language:en
Short-container-title:Jetp Lett.

Author:

Zakharchenko K. V.,Karavanskii V. A.,Kotkovskii G. E.,Kuznetsov M. B.,Chistyakov A. A.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1387516.pdf

Reference14 articles.

1. A. G. Cullis, L. T. Canham, and P. D. J. Calcott, J. Appl. Phys. 82, 909 (1997).

2. J. C. Vial, A. Bsiesy, F. Gaspard, et al., Phys. Rev. B 45, 14171 (1992).

3. P. K. Kashkarov, E. A. Konstantinova, and V. Yu. Timoshenko, Fiz. Tekh. Poluprovodn. (St. Petersburg) 30, 1479 (1996) [Semiconductors 30, 778 (1996)].

4. M. S. Bresler and I. N. Yassievich, Fiz. Tekh. Poluprovodn. (St. Petersburg) 27, 871 (1993) [Semiconductors 27, 475 (1993)].

5. E. F. Venger, É. B. Kopanovich, S. I. Kirillova, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 1330 (1999) [Semiconductors 33, 1202 (1999)].

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