Current-voltage characteristics of Si:B blocked impurity-band structures under conditions of hopping-transport-limited photoresponse-Reference-Cited by-同舟云学术

Current-voltage characteristics of Si:B blocked impurity-band structures under conditions of hopping-transport-limited photoresponse

Published:1998-02 Issue:2 Volume:32 Page:174-180
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Aronzon B. A.,Kovalev D. Yu.,Kozlov A. M.,Leotin J.,Ryl’kov V. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187339.pdf

Reference17 articles.

1. M. D. Petroff and M. G. Stapelbroek, Blocked Impurity Band Detectors (United States Patent No. 4 568 960, February 4, 1986).

2. N. Sclar, Quantum Electron. 9, 149 (1984).

3. F. Szmulowicz and F. L. Madarsz, J. Appl. Phys. 62, 2533 (1987).

4. Sh. M. Kogan, Zh. Eksp. Teor. Fiz. 81, 2268 (1981) [Sov. Phys. JETP 54, 1203 (1981)].

5. S. Pasquier, G. Sirmain, C. Meny, A. Murray, M. Criffin, P. Ade, L. Essaleh, J. Galibert, and J. Leotin, in Proceedings of the Eighth International Conference on Millimeter and Submillimeter Waves and Applications (San Diego, 1994), p. 35.

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