Mesa stripe for the 3–3.6 μm range lasers utilizing gadolinium-doped InAsSbP/InGaAsSb double heterostructures-Reference-Cited by-同舟云学术

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Mesa stripe for the 3–3.6 μm range lasers utilizing gadolinium-doped InAsSbP/InGaAsSb double heterostructures

Published:1997-01 Issue:1 Volume:23 Page:41-42
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Zotova N. V.,Karandashev S. A.,Matveev B. A.,Remennyi M. A.,Stus’ N. M.,Talalakin G. N.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1261611.pdf

Reference5 articles.

1. C. H. L. Goodman, Solid State Electron. Dev. 2(5), 129 (1978).

2. B. A. Matveeev, N. M. Stus’, and G. N. Talalakin, Kristallografiya 33, 216 (1988) [Sov. J. Crystallogr. 33, (1988)].

3. T. S. Argunova, R. N. Kyutt, B. A. Matveev et al., Fiz. Tverd. Tela 36, 3071 (1994) [Phys. Solid State 36, 1633 (1994)].

4. M. Aydaraliev, N. V. Zotova, S. A. Karandashov et al., Semicond. Sci. Technol. 8, 1575 (1993).

5. A. N. Baranov, T. I. Voronina, T. S. Lagunova et al., Fiz. Tekh. Poluprovodn. 27, 421 (1993) [Semiconductors 27, 236 (1993)].

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.0–3.3 µm) for diode laser spectroscopy;Semiconductors;2000-07

2. Spectral and mode characteristics of InAsSbP/InAsSb/InAsSbP lasers in the spectral region near 3.3 µm;Semiconductors;1998-09

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