Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy-Reference-Cited by-同舟云学术

Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

Published:2009-08 Issue:8 Volume:43 Page:1092-1097
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Usmonov Sh. N.,Saidov A. S.,Leyderman A. Yu.,Saparov D.,Kholikov K. T.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782609080235.pdf

Reference27 articles.

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5. C. M. Ruiz, J. L. Plaza, V. Berm’udez, and E. Di’eguez, J. Phys.: Condens. Matter. 14, 12755 (2002).

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