Anomalous relaxation of photoconductivity in silicon at high excitation levels-Reference-Cited by-同舟云学术

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Anomalous relaxation of photoconductivity in silicon at high excitation levels

Published:2009-03 Issue:3 Volume:43 Page:310-312
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Borodovskii P. A.,Buldygin A. F.,Golod S. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782609030099.pdf

Reference6 articles.

1. G. N. Galkin, Trudy Fiz. Inst. AN SSSR 128, 3 (1981).

2. E. Yablonovich and T. Gmitter, Appl. Phys. Lett. 49, 587 (1986).

3. P. A. Borodovskii, A. F. Buldygin, and A. S. Tokarev, Fiz. Tekh. Poluprovodn. 38, 1043 (2004) [Semiconductors 38, 1005 (2004)].

4. P. A. Borodovskii, A. F. Buldygin, and A. S. Tokarev, Mikroelektronika 35(6), 403 (2006).

5. B. V. Zubov, A. A. Manenkov, V. A. Milyaev, G. N. Mikhailova, T. M. Murin, V. A. Sanina, and A. F. Seferov, Trudy Fiz. Inst. AN 100, 51 (1977).

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