Electroluminescence in the region of interband transitions in a high-efficiency silicon light-emitting diode with a small area of the rectifying contact-Reference-Cited by-同舟云学术

Electroluminescence in the region of interband transitions in a high-efficiency silicon light-emitting diode with a small area of the rectifying contact

Published:2006-07 Issue:7 Volume:40 Page:860-863
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Emel’yanov A. M.,Zabrodskiĭ V. V.,Zabrodskaya N. V.,Sobolev N. A.,Sukhanov V. L.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782606070220.pdf

Reference15 articles.

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3. Th. Trupke, J. Zhao, A. Wang, et al., Appl. Phys. Lett. 82, 2996 (2003).

4. A. M. Emel’yanov, Yu. A. Nikolaev, and N. A. Sobolev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 453 (2002) [Semiconductors 36, 430 (2002)].

5. A. M. Emel’yanov, N. A. Sobolev, and S. Pizzini, Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 1307 (2002) [Semiconductors 36, 1225 (2002)].

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