AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f max as high as 100 GHz-Reference-Cited by-同舟云学术

AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f max as high as 100 GHz

Published:2009-04 Issue:4 Volume:43 Page:537-543
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Mokerov V. G.,Kuznetsov A. L.,Fedorov Yu. V.,Bugaev A. S.,Pavlov A. Yu.,Enyushkina E. N.,Gnatyuk D. L.,Zuev A. V.,Galiev R. R.,Ovcharenko E. N.,Sveshnikov Yu. N.,Tsatsulnikov A. F.,Ustinov V. M.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782609040253.pdf

Reference7 articles.

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3. M. Higashiwaki, N. Onojima, T. Matsui, and T. Minura, in Proc. of the Intern. Conf. on Nitride Semiconductors (Bremen, Germany, 2005), Paper We-ED2-4.

4. T. Palacios, A. Chakraborty, S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra, IEEE Electron. Dev. Lett. 27(1), 15 (2006).

5. V. G. Mokerov, A. A. Kuznetsov, Yu. V. Fedorov, E. N. Enyushkina, A. S. Bugaev, A. Yu. Pavlov, D. L. Gnatyuk, A. V. Zuev, R. R. Galiev, Yu. N. Sveshnikov, A. F. Tsatsul’nikov, V. M. Ustinov, in Proc. of the 6th All-Russ. Conf. on Nitrides of Gallium, Indium and Aluminum — Structures and Devices (Russia, 2008), p. 152.

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