Effect of postgrowth techniques on the characteristics of triple-junction InGaP/Ga(In)As/Ge solar cells-Reference-Cited by-同舟云学术

Effect of postgrowth techniques on the characteristics of triple-junction InGaP/Ga(In)As/Ge solar cells

Published:2014-08-31 Issue:9 Volume:48 Page:1217-1221
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Andreev V. M.,Grebenshchikova E. A.,Dmitriev P. A.,Ilinskaya N. D.,Kalinovsky V. S.,Kontrosh E. V.,Malevskaya A. V.,Usikova A. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782614090024.pdf

Reference14 articles.

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2. http://www.sj-solar.com

3. V. M. Andreev, N. A. Kalyuzhnyi, S. A. Mintairov, V. S. Kalinovsky, and M. Z. Shvarts, in Proceedings of the REENFOR-2013 Conference (Moscow, 2013), p. 65.

4. V. M. Andreev, V. V. Evstropov, V. S. Kalinovsky, V. M. Lantratov, and V. P. Khvostikov, Semiconductors 43, 644 (2009).

5. V. S. Kalinovsky, V. V. Evstropov, et al., in Proceedings of the 24th European Photovoltaic Solar Energy Conference (Hamburg, Gemany, 2009), p. 733.

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