GaSb laser-power (λ = 1550 nm) converters: Fabrication method and characteristics-Reference-Cited by-同舟云学术

GaSb laser-power (λ = 1550 nm) converters: Fabrication method and characteristics

Published:2016-10 Issue:10 Volume:50 Page:1338-1343
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Khvostikov V. P.,Sorokina S. V.,Khvostikova O. A.,Levin R. V.,Pushnyi B. V.,Timoshina N. Kh.,Andreev V. M.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782616100146.pdf

Reference19 articles.

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2. J. Mukherjee, S. Jarvis, M. Perren, and S. J. Sweeney, J. Phys. D: Appl. Phys. 46, 264006 (2013).

3. S. D. Jarvis, J. Mukherjee, M. Perren, and S. J. Sweeney, IET Optoelectron. 8, 64 (2014).

4. S. Jarvis, J. Mukherjee, M. Perren, and S. J. Sweeney, in Proceedings of the 39th IEEE Photovoltaic Specialists Conference (Tampa, USA, 2013), p. 1031.

5. S. J. Sweeney and J. Mukherjee, British Patent Application (2012).

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