High-power diode lasers (λ = 1.7–1.8 µm) based on asymmetric quantum-well separate-confinement InGaAsP/InP heterostructures-Reference-Cited by-同舟云学术

High-power diode lasers (λ = 1.7–1.8 µm) based on asymmetric quantum-well separate-confinement InGaAsP/InP heterostructures

Published:2009-12 Issue:12 Volume:43 Page:1602-1605
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Lyutetskiy A. V.,Pikhtin N. A.,Fetisova N. V.,Leshko A. Yu.,Slipchenko S. O.,Sokolova Z. N.,Ryaboshtan Yu. A.,Marmalyuk A. A.,Tarasov I. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782609120057.pdf

Reference17 articles.

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3. E. G. Golikova, V. A. Kureshov, A. V. Lyutetskii, N. A. Pikhtin, N. V. Fetisova, A. Yu. Leshko, Yu. A. Ryaboshtan, S. O. Slipchenko, Z. N. Sokolova, A. D. Bondarev, and I. S. Tarasov, Pis’ma Zh. Tekh. Fiz. 28(3), 66 (2002) [Tech. Phys. Lett. 28, 113 (2002)].

4. A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, A. Yu. Leshko, V. V. Shamakhov, A. Yu. Andreev, Yu. A. Ryaboshtan, E. G. Golikova, and I. S. Tarasov, Fiz. Tekh. Poluprovodn. 37, 1394 (2003) [Semiconductors 37, 1356 (2003)].

5. A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, N. V. Fetisova, A. Yu. Leshko, Yu. A. Ryaboshtan, E. G. Golikova, and I. S. Tarasov, Pis’ma Zh. Tekh. Fiz. 29(7), 55 (2003) [Tech. Phys. Lett. 29, 290 (2003)].

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