Features of a priori heavy doping of the n-TiNiSn intermetallic semiconductor-Reference-Cited by-同舟云学术

Features of a priori heavy doping of the n-TiNiSn intermetallic semiconductor

Published:2011-07 Issue:7 Volume:45 Page:850-856
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Romaka V. A.,Rogl P.,Romaka V. V.,Hlil E. K.,Stadnyk Yu. V.,Budgerak S. M.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782611070190.pdf

Reference19 articles.

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2. Yu. V. Stadnyk, V. A. Romaka, Yu. K. Gorelenko, L. P. Romaka, D. Fruchart, and V. F. Chekurin, J. Alloys Comp. 400, 29 (2005).

3. D. Fruchart, V. A. Romaka, Yu. V. Stadnyk, L. P. Romaka, Yu. K. Gorelenko, M. G. Shelyapina, and V. F. Chekurin, J. Alloys Comp. 438, 8 (2007).

4. V. A. Romaka, Yu. V. Stadnyk, V. V. Romaka, D. Frushart, Yu. K. Gorelenko, V. F. Chekurin, and A. M. Goryn’, Fiz. Tekh. Poluprovodn. 41, 1059 (2007) [Semiconductors 41, 1041 (2007)].

5. V. A. Romaka, D. Fruchart, E. K. Hlil, R. E. Gladyshevskii, D. Gignoux, V. V. Romaka, B. S. Kuzhel’, and R. V. Kraiovskii, Fiz. Tekh. Poluprovodn. 44, 310 (2010) [Semiconductors 44, 293 (2010)].

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