Threshold characteristics of an IR laser based on deep InAsSb/AlSb quantum well-Reference-Cited by-同舟云学术

Threshold characteristics of an IR laser based on deep InAsSb/AlSb quantum well

Published:2008-05 Issue:5 Volume:42 Page:557-562
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Danilov L. V.,Zegrya G. G.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782608050126.pdf

Reference5 articles.

1. V. N. Abakumov, I. V. Perel’, and I. N. Yasievich, Nonradiative Recombination in Semiconductors (S-Peterburg. Inst. Yad. Fiz. Ross. Akad. Nauk, St. Petersburg, 1997) [in Russian].

2. G. G. Zegrya and V. A. Kharchenko, Zh. Éksp. Teor. Fiz. 101, 327 (1992) [Sov. Phys. JETP 74, 173 (1992)].

3. G. G. Zegrya, in Antimonide Related Strained Layer Heterostructures, Ed. by M. O. Manasreh (Gordon and Breach, Amsterdam, 1997).

4. L. V. Danilov and G. G. Zegrya, Fiz. Tekh. Poluprovodn. 42, 566 (2008) [Semiconductors 42, 550 (2008)].

5. L. V. Asryan, N. A. Gun’ko, A. S. Polkovnikov, et al., Semicond. Sci. Technol. 15, 1132 (2000).

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