Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide-Reference-Cited by-同舟云学术

Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide

Published:2010-02 Issue:2 Volume:44 Page:233-237
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Vinokurov D. A.,Vasilyeva V. V.,Kapitonov V. A.,Lyutetskiy A. V.,Nikolaev D. N.,Pikhtin N. A.,Slipchenko S. O.,Stankevich A. L.,Shamakhov V. V.,Fetisova N. V.,Tarasov I. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106378261002017X.pdf

Reference11 articles.

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3. N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, and I. S. Tarasov, Fiz. Tekh. Poluprovodn. 38, 374 (2004) [Semiconductors 38, 360 (2004)].

4. N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, A. L. Stankevich, D. A. Vinokurov, I. S. Tarasov, and Zh. I. Alferov, Electron. Lett. 40, 1413 (2004).

5. V. V. Shamakhov, D. A. Vinokurov, A. L. Stankevich, V. A. Kapitonov, S. A. Zorina, D. N. Nikolaev, A. V. Murashova, A. D. Bondarev, and I. S. Tarasov, Pis’ma Zh. Tekh. Fiz. 31 (23), 1 (2005) [Tech. Phys. Lett. 31, 993 (2005)].

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