Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs-Reference-Cited by-同舟云学术

Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs

Published:2009-06 Issue:6 Volume:43 Page:812-817
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Sakharov A. V.,Lundin W. V.,Zavarin E. E.,Sinitsyn M. A.,Nikolaev A. E.,Usov S. O.,Sizov V. S.,Mikhailovsky G. A.,Cherkashin N. A.,Hytch M.,Hue F.,Yakovlev E. V.,Lobanova A. V.,Tsatsulnikov A. F.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782609060232.pdf

Reference10 articles.

1. E. F. Schubert, Light-Emitting Diodes (Cambridge Univ., Cambridge, 2003).

2. A. Zukauskas, M. Shur, and R. Gaska, Introduction to Solid-State Lighting (Wiley, New York, 2002).

3. H. Casey and M. Panish, Heterostructure Lasers (Academic, New York, 1978; Mir, Moscow, 1981), vol. 2.

4. http://compoundsemiconductor.net/cws/article/magazine/34344

5. S. Yu. Karpov, R. A. Talalaev, E. V. Yakovlev, and Yu. N. Makarov, Mater. Res. Soc. Symp. Proc. 639, G3.18 (2001).

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