Simulation of degradation of the profile of nanoporous silicon in the course of annealing in an inhomogeneous temperature field-Reference-Cited by-同舟云学术

Simulation of degradation of the profile of nanoporous silicon in the course of annealing in an inhomogeneous temperature field

Published:2009-03 Issue:3 Volume:43 Page:355-358
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Kostishko B. M.,Zolotov A. V.,Nagornov Yu. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782609030178.pdf

Reference10 articles.

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2. B. M. Kostishko, A. V. Zolotov, and Sh. R. Atazhanov, Phys. Low-Dim. Struct. 3–4, 1 (2004).

3. J. M. McCoy and P. A. Maksym, Semicond. Sci. Technol. 6, 141 (1991).

4. S. Kersulis and V. Mitin, Semicond. Sci. Technol. 10, 653 (1995).

5. A. M. Orlov, B. M. Kostishko, and A. A. Skvortsov, Physical Basics of Technology of Semiconductor Devices and Integrated Circuits (Ul’yanovsk. State Univ., Ul’yanovsk, 2001) [in Russian].

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