Features of conduction mechanisms in n-HfNiSn semiconductor heavily doped with a Rh acceptor impurity-Reference-Cited by-同舟云学术

Features of conduction mechanisms in n-HfNiSn semiconductor heavily doped with a Rh acceptor impurity

Published:2013-09 Issue:9 Volume:47 Page:1145-1152
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Romaka V. A.,Rogl P.,Stadnyk Yu. V.,Romaka V. V.,Hlil E. K.,Krajovskii V. Ya.,Horyn A. M.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782613090200.pdf

Reference13 articles.

1. V. A. Romaka, P. Rogl, Yu. V. Stadnyk, V. V. Romaka, E. K. Hlil, V. Ya. Kraiovskii, and A. M. Goryn’, Semiconductors 46, 1106 (2012).

2. L. I. Anatychuk, Termoelements and Thermoelectric Devices (Nauk. Dumka, Kiev, 1979) [in Russian].

3. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Moscow, Nauka, 1979; Springer, Berlin, 1984).

4. F. G. Aliev, R. Villar, S. Vieira, N. Levanyuk, and R. V. Skolozdra, Phys. Rev. B 50, 17881 (1994).

5. V. A. Romaka, V. V. Romaka, and Yu. V. Stadnyk, Intermetallic Semiconductors: Properties and Applications (L’vovsk. Politekhnika, L’vov, 2011) [in Russian].

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