Mechanism and Behavior of the Light Flux Decrease in Light-Emitting Diodes Based on AlGaN/InGaN/GaN Structures with Quantum Wells upon Prolonged Direct-Current Flow of Various Densities-Reference-Cited by-同舟云学术

Mechanism and Behavior of the Light Flux Decrease in Light-Emitting Diodes Based on AlGaN/InGaN/GaN Structures with Quantum Wells upon Prolonged Direct-Current Flow of Various Densities

Published:2018-03 Issue:3 Volume:52 Page:359-365
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Manyakhin F. I.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1134/S1063782618030168/fulltext.html

Reference16 articles.

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3. N. I. Bochkareva, A. A. Efremov, Yu. T. Rebane, R. I. Gorbunov, A. V. Klochkov, and Yu. T. Shreter, Semiconductors 40, 118 (2006).

4. S. G. Nikiforov, Kompon. Tekhnol., No. 11, 42 (2006).

5. K. A. Vinogradova, V. E. Bugrov, A. R. Kovsh, M. A. Odnoblyudov, V. I. Nikolaeva, and A. E. Romanov, Izv. Vyssh. Uchebn. Zaved., Priborostroen. 56 (11), 87 (2015).

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