Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers (λ = 900

Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers (λ = 900–920 nm)

Published:2010-10 Issue:10 Volume:44 Page:1370-1374
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Ladugin M. A.,Lyutetskiy A. V.,Marmalyuk A. A.,Padalitsa A. A.,Pikhtin N. A.,Podoskin A. A.,Rudova N. A.,Slipchenko S. O.,Shashkin I. S.,Bondarev A. D.,Tarasov I. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782610100222.pdf

Reference6 articles.

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4. I. S. Tarasov, D. Z. Garbuzov, V. P. Evtikhiev, A. V. Ovchinnikov, Z. N. Sokolova, and A. V. Chudinov, Fiz. Tekh. Poluprovodn. 19, 1496 (1985) [Sov. Phys. Semicond. 19, 920 (1985)].

5. High-Power Diode Lasers: Fundamentals, Technology, Applications, Ed. by R. Diehl, Topics in Appl. Phys., vol. 78 (Springer, 2001).

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