Calculation of capacitance of self-compensated semiconductors with intercenter hops of one and two electrons (by the example of silicon with radiation defects)-Reference-Cited by-同舟云学术

Calculation of capacitance of self-compensated semiconductors with intercenter hops of one and two electrons (by the example of silicon with radiation defects)

Published:2008-12 Issue:12 Volume:42 Page:1388-1394
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Poklonski N. A.,Vyrko S. A.,Zabrodskii A. G.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782608120038.pdf

Reference33 articles.

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3. V. N. Brudnyi, N. G. Kolin, and L. S. Smirnov, Fiz. Tekh. Poluprovodn. 41, 1031 (2007) [Semiconductors 41, 1011 (2007)].

4. P. W. ukowski, S. B. Kantorow, K. Kiszczak, et al., Phys. Stat. Solidi A 128, K117 (1991).

5. V. S. L’vov, V. I. Strikha, O. V. Tretyak, and A. A. Shmatov, Fiz. Tverd. Tela 31(11), 206 (1989) [Sov. Phys. Solid State 31, 1953 (1989)].

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