Temperature-dependent excitonic absorption in long-period multiple In x Ga1 − x As/GaAs quantum well structures-Reference-Cited by-同舟云学术

Temperature-dependent excitonic absorption in long-period multiple In x Ga1 − x As/GaAs quantum well structures

Published:2011-01 Issue:1 Volume:45 Page:103-109
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Vaganov S. A.,Seisyan R. P.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782611010222.pdf

Reference21 articles.

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2. R. Loudon, J. Phys. A 3, 233 (1970).

3. J. Voigt, Phys. Status Solidi B 64, 549 (1974).

4. N. N. Akhmediev, G. P. Golubev, V. S. Dneprovskii, and E. A. Zhukov, Fiz. Tverd. Tela 25, 2225 (1983) [Sov. Phys. Solid State 25, 1284 (1983)].

5. V. A. Kosobukin, R. P. Seisyan, and S. A. Vaganov, Semicond. Sci. Technol. 8, 1235 (1993).

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