Specific features of the metal-insulator conductivity transition in narrow-gap semiconductors of the MgAgAs structure type-Reference-Cited by-同舟云学术

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Specific features of the metal-insulator conductivity transition in narrow-gap semiconductors of the MgAgAs structure type

Published:2006-02 Issue:2 Volume:40 Page:131-136
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Romaka V. A.,Stadnyk Yu. V.,Shelyapina M. G.,Fruchart D.,Chekurin V. F.,Romaka L. P.,Gorelenko Yu. K.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782606020035.pdf

Reference21 articles.

1. S. J. Poon, Adv. Phys. 41, 303 (1992).

2. M. A. Kouacou, J. Pierre, and R. V. Skolozdra, J. Phys.: Condens. Matter 7, 7373 (1995).

3. H. Hohl, A. P. Ramirez, C. Goldmann, et al., J. Phys.: Condens. Matter 11, 1697 (1999).

4. C. Uher, J. Yang, S. Hu, et al., Phys. Rev. B 59, 8615 (1999).

5. J. Tobola, J. Pierre, S. Kaprzyk, et al., J. Phys.: Condens. Matter 10, 1013 (1998).

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