Development of photodetectors for image converters: Doping of silicon with selenium from the gas phase-Reference-Cited by-同舟云学术

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Development of photodetectors for image converters: Doping of silicon with selenium from the gas phase

Published:2008-04 Issue:4 Volume:42 Page:448-452
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Astrov Yu. A.,Shuman V. B.,Lodygin A. N.,Portsel L. M.,Makhova A. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782608040131.pdf

Reference15 articles.

1. Sh. S. Kasymov and L. G. Paritskiĭ, Available from VINITI, No. 2693 (1974).

2. Yu. A. Astrov and L. M. Portsel’, Zh. Tekh. Fiz. 51, 2502 (1981) [Sov. Phys. Tekh. Phys. 26, 1480 (1981)].

3. Yu. A. Astrov, L. G. Paritskiĭ, L. M. Portsel’, and S. M. Ryvkin, Available from Élektronika, No. 2472 (1978).

4. L. M. Portsel, Yu. A. Astrov, I. Reimann, et al., J. Appl. Phys. 85, 3960 (1999).

5. V. M. Murugov, A. G. Kravchenko, V. P. Lazarchuk, et al., Proc. SPIE 4948, 801 (2003).

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3. Doping of silicon with selenium by diffusion from the gas phase;Semiconductors;2014-03

4. Redistribution of deep selenium and sulfur impurities in silicon upon surface doping with phosphorus;Semiconductors;2009-06

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