Features of long-term relaxation of capacitance in rectifying structures based on n-ZnP2-Reference-Cited by-同舟云学术

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Features of long-term relaxation of capacitance in rectifying structures based on n-ZnP2

Published:2008-06 Issue:6 Volume:42 Page:662-668
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Stamov I. G.,Tkachenko D. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782608060067.pdf

Reference23 articles.

1. S. Taguchi, T. Goto, T. Takeda, and G. Kido, J. Phys. Soc. Jpn. 57, 3256 (1988).

2. A. P. Krokhmal’, V. A. Gubanov, and Z. Z. Yanchuk, Fiz. Tverd. Tela 45, 1177 (2003) [Phys. Solid State 45, 1233 (2003)].

3. N. M. Belyĭ, I. S. Gorban’, V. A. Gubanov, and I. N. Dmitruk, Pis’ma Zh. Éksp. Teor. Fiz 50, 75 (1989) [JETP Lett. 50, 85 (1989)].

4. I. S. Gorban’, Ukr. Fiz. Zh. 37, 1860 (1992).

5. A. B. Pevtsov, C.A. Permogorov, A. V. Cel’kin, et al., Fiz. Tekh. Poluprovodn. 16, 1399 (1982) [Sov. Phys. Semicond. 16, 897 (1982)].

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